參數(shù)資料
型號: HY5DU56822AT-K
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 256M-S DDR SDRAM
中文描述: 32M X 8 DDR DRAM, 0.75 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁數(shù): 31/36頁
文件大?。?/td> 374K
代理商: HY5DU56822AT-K
Rev. 0.4/ May. 02 31
HY5DU56422A(L)T
HY5DU56822A(L)T
HY5DU561622A(L)T
AC CHARACTERISTICS II
(AC operating conditions unless otherwise noted)
Parameter
Symbol
DDR266A
DDR266B
DDR200
Unit
Note
Min
Max
Min
Max
Min
Max
Row Cycle Time
tRC
65
-
65
-
70
-
ns
Auto Refresh Row Cycle Time
tRFC
75
-
75
-
80
-
ns
Row Active Time
tRAS
45
120K
45
120K
50
120K
ns
Active to Read with Auto Precharge Delay
tRAP
tRCD or
tRPmin
-
tRCD or
tRPmin
-
tRCD or
tRPmin
-
ns
16
Row Address to Column Address Delay
tRCD
20
-
20
-
20
-
ns
Row Active to Row Active Delay
tRRD
15
-
15
-
15
-
ns
Column Address to Column Address Delay
tCCD
1
-
1
-
1
-
CK
Row Precharge Time
tRP
20
-
20
-
20
-
ns
Write Recovery Time
tWR
15
-
15
-
15
-
ns
Write to Read Command Delay
tWTR
1
-
1
-
1
-
CK
Auto Precharge Write Recovery +
Precharge Time
tDAL
(tWR/tCK)
+
(tRP/tCK)
-
(tWR/tCK)
+
(tRP/tCK)
-
(tWR/tCK)
+
(tRP/tCK)
-
CK
15
System Clock Cycle Time
CL = 2.5
tCK
7.5
12
7.5
12
8.0
12
ns
CL = 2
7.5
12
10
12
10
12
ns
Clock High Level Width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
CK
Clock Low Level Width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
CK
Data-Out edge to Clock edge Skew
tAC
-0.75
0.75
-0.75
0.75
-0.75
0.75
ns
DQS-Out edge to Clock edge Skew
tDQSCK
-0.75
0.75
-0.75
0.75
-0.75
0.75
ns
DQS-Out edge to Data-Out edge Skew
tDQSQ
-
0.5
-
0.5
-
0.6
ns
Data-Out hold time from DQS
tQH
t
HP
-t
QHS
-
t
HP
-t
QHS
-
t
HP
-t
QHS
-
ns
1,10
Clock Half Period
tHP
min
(tCL,tCH)
-
min
(tCL,tCH)
-
min
(tCL,tCH)
-
ns
1,9
Data Hold Skew Factor
tQHS
-
0.75
-
0.75
-
0.75
ns
10
Valid Data Output Window
tDV
t
QH
-t
DQSQ
t
QH
-t
DQSQ
t
QH
-t
DQSQ
ns
Data-out high-impedance window from
CK,/CK
tHZ
-0.75
0.75
-0.75
0.75
-0.8
0.8
ns
17
Data-out low-impedance window from
CK
,
/CK
tLZ
-0.75
0.75
-0.75
0.75
-0.8
0.8
ns
17
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