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參數(shù)資料
| 型號： | HY5DU561622CT-D |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256M-P DDR SDRAM |
| 中文描述： | 256M磷DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 28/34頁 |
| 文件大?。?/td> | 248K |
| 代理商： | HY5DU561622CT-D |
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Rev. 0.3 / Oct. 2003 28
HY5DU56422CT-D4/ D43
HY5DU56822CT-D4/ D43
HY5DU561622CT-D4/ D43
AC Overshoot/ Undershoot Specification for Address and Control Pins
This specification is intended for devices with no clamp protection and is guaranteed by design
Overshoot/ Undershoot Specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR333
DDR200/ 266
Maximum peak amplitude allowed for overshoot (See Figure 1):
1.5V
1.5V
Maximum peak amplitude allowed for undershoot (See Figure 1):
1.5V
1.5V
The area between the overshoot signal and VDD must be less than or equal to (See Figure 1):
4.5V - ns
4.5V - ns
The area between the undershoot signal and GND must be less than or equal to (See Figure 1):
4.5V - ns
4.5V - ns
Parameter
Specification
DDR333
DDR200/ 266
Maximum peak amplitude allowed for overshoot (See Figure 2):
1.2V
1.2V
Maximum peak amplitude allowed for undershoot (See Figure 2):
1.2V
1.2V
The area between the overshoot signal and VDD must be less than or equal to (See Figure 2):
2.4V - ns
2.4V - ns
The area between the undershoot signal and GND must be less than or equal to (See Figure 2):
2.4V - ns
2.4V - ns
V
DD
0
1
2
3
4
5
6
0
+ 1
+ 2
+ 3
+ 4
+ 5
-1
-2
-3
Volts
(V)
Time(ns)
Undershoot
Ground
Max. area= 4.5V-ns
Overshoot
Max. amplitude= 1.5V
Figure 1: Address and Control AC Overshoot and Undershoot Definitio
V
DD
0
1
2
3
4
5
6
0
+ 1
+ 2
+ 3
+ 4
+ 5
-1
-2
-3
Volts
(V)
Time(ns)
Undershoot
Ground
Max. area= 2.4V-ns
Overshoot
Max. amplitude= 1.2V
Figure 2: DQ/ DM/ DQS AC Overshoot and Undershoot Definition
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PDF描述 |
|---|---|
| HY5PS1G1631CFP | 1Gb DDR2 SDRAM |
| HY5PS1G1631CFP-C4 | 1Gb DDR2 SDRAM |
| HY5PS1G1631CFP-E3 | 1Gb DDR2 SDRAM |
| HY5PS1G1631CFP-S5 | 1Gb DDR2 SDRAM |
| HY5PS1G1631CFP-Y5 | 1Gb DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DU561622CT-D4 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M-P DDR SDRAM |
| HY5DU561622CT-D43 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M-P DDR SDRAM |
| HY5DU561622CTP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(16Mx16) gDDR SDRAM |
| HY5DU561622CTP-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(16Mx16) gDDR SDRAM |
| HY5DU561622CTP-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(16Mx16) gDDR SDRAM |
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