參數(shù)資料
型號： HY5DU561622CT-D4
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 256M-P DDR SDRAM
中文描述： 16M X 16 DDR DRAM, 0.65 ns, PDSO66
封裝： 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁數(shù)： 22/34頁
文件大小： 248K
代理商： HY5DU561622CT-D4
Rev. 0.3 / Oct. 2003 22
HY5DU56422CT-D4/ D43
HY5DU56822CT-D4/ D43
HY5DU561622CT-D4/ D43
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note :
1. V
DDQ
must not exceed the level of V
DD
.
2. V
IL
(min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. V
REF
is expected to be equal to 0.5*V
DDQ
of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on V
REF
may not exceed +/- 2% of the dc value.
4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the
entire temper ature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it
represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation
in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source
voltages from 0.1 to 1.0.
6. VIN=0 to VDD, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to VDDQ
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
o
C
Storage Temperature
T
STG
-55 ~ 125
o
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
relative to V
SS
V
DD
-0.5 ~ 3.6
V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
I
OS
50
mA
Power Dissipation
P
D
1
W
Soldering Temperature
Time
T
SOLDER
260
10
o
C
sec
Parameter
Symbol
Min
Max
Unit
Note
Power Supply Voltage
V
DD
2.3
2.7
V
Power Supply Voltage
V
DDQ
2.3
2.7
V
1
Input High Voltage
V
IH
V
REF
+ 0.15
V
DDQ
+ 0.3
V
Input Low Voltage
V
IL
-0.3
V
REF
- 0.15
V
2
Termination Voltage
V
TT
V
REF
- 0.04
V
REF
+ 0.04
V
Reference Voltage
V
REF
VDDQ/2 -
50mV
VDDQ/2 +
50mV
V
3
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.36
VDDQ+0.6
V
4
V-I Matching: Pullup to Pulldown Current Ratio
VI(RATIO)
0.71
1.4
-
5
Input Leakage Current
I
LI
-2
2
uA
6
Output Leakage Current
I
LO
-5
5
uA
Output High Voltage
V
OH
V
TT
+ 0.76
-
V
I
OL
= -15.2mA
Output Low Voltage
V
OL
-
V
TT
- 0.76
V
I
OL
= +15.2mA
相關(guān)PDF資料
PDF描述
HY5DU561622CT-D43 256M-P DDR SDRAM
HY5DU56422CT-D4 256M-P DDR SDRAM
HY5DU56422CT-D43 256M-P DDR SDRAM
HY5DU56822CT-D 256M-P DDR SDRAM
HY5DU56822CT-D4 256M-P DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HY5DU561622CTP-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(16Mx16) gDDR SDRAM
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