參數(shù)資料
型號(hào): HV9906
廠商: Supertex, Inc.
英文描述: Simple Off-Line/PFC & >9V DC/DC Switcher
中文描述: 簡(jiǎn)單Off-Line/PFC
文件頁(yè)數(shù): 8/10頁(yè)
文件大?。?/td> 445K
代理商: HV9906
HV9906
Design Information -
continued
Operating from a full wave rectified AC input
For these applications there is no minimum input voltage, thus
adding a fixed value series resistor is not possible. However, a
dynamic resistor consisting of a depletion MOSFET may be added
as depicted in the following diagram.
+Vin
Von
Vdd
AGND
Vs
1
2
3
4
5
6
7
8
GATE
PGND
NS
PS
HV9906
DN3145N8
This method limits the +V
IN
voltage to V
DD
+ V
GS(OFF)
of the
depletion MOSFET for all input voltages and in fact raises the
maximum allowable peak input voltage to the breakdown voltage
rating of the depletion MOSFET. The worst-case power
dissipation in the HV9906 is now given by the equation
Power Dissipation HV9906 =(
DD
V
and the dissipation in the depletion MOSFET is given by the
equation
Power Dissipation in MOSFET
(
Which for the previously calculated input current of 3mA, 265V
RMS
input voltage and using the DN3145N8 depletion MOSFET yields
the following results.
Power Dissipation HV9906 =(
5
11
+
Power Dissipation in MOSFET
(
Power Dissipation in MOSFET
0.76W
IN
I
max
)
OFF
(
GS
)
V
×
+
IN
I
)
OFF
(
GS
DD
S
)
V
V
V
×
mW
5
43
10
3
)
3
=
×
×
3
10
3
)
5
10
265
×
×
Using High Thermal Conductivity Encapsulation
For an encapsulated application the required thermal resistance of
the encapsulating material can be calculated using the following
equation.
V
R
(
T
T
R
×
R
θ
ca
is the required thermal resistance of the encapsulating
material.
T
j
is the maximum junction temperature.
T
a
is the maximum ambient temperature.
R
θ
jc
is the junction to case thermal resistance of the package.
V
IN(max)
is the maximum DC or RMS input voltage.
I
IN
is the input current required at the highest operating frequency.
As an example, consider an application where the input current is
3mA as calculated earlier, operating with a maximum input voltage
of 265V
RMS
in an 85
°
C ambient and an SOIC packaged device will
be used. The thermal resistance of the encapsulating material can
then be calculated as follows.
10
3
265
45
(
85
150
R
3
ca
×
×
IN
I
(max)
IN
V
IN
I
(max)
IN
jc
a
j
ca
θ
)
×
×
=
θ
W
/
C
76
.
36
10
3
265
)
3
°
=
×
×
×
=
θ
R
θ
ca
R
jc
θ
High Thermal Conductivity Encapsulant
Dice
Printed Circuit Board
Supertex, Inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 FAX: (408) 222-4895 www.supertex.com
8 07/23/02
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