- 您現在的位置：買賣IC網 > PDF目錄384450 > HUFA76629D3ST (FAIRCHILD SEMICONDUCTOR CORP) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA PDF資料下載
參數資料
| 型號： | HUFA76629D3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA |
| 中文描述： | 20 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 203K |
| 代理商： | HUFA76629D3ST |
2002 Fairchild Semiconductor Corporation
HUFA76629D3, HUFA76629D3S Rev. B
HUFA76629D3, HUFA76629D3S
20A, 100V, 0.054
Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
JEDEC TO-251AA
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.052
,
V
GS
=
10V
- r
DS(ON)
= 0.054
,
V
GS
=
5V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electriecal Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SDRAIN
HUFA76629D3
GATE
SOURCE
DRAIN
(FLANGE)
HUFA76629D3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUFA76629D3
TO-251AA
76629D
HUFA76629D3S
TO-252AA
76629D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76629D3ST.
HUFA76629D3, HUFA76629D3S
100
100
±
16
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
20
20
20
20
Figure 4
A
A
A
A
Figures 6, 17, 18
110
0.74
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
Data Sheet
January 2002
相關PDF資料 |
PDF描述 |
|---|---|
| HUFA76633S3S | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUFA76633P3 | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUFA76639P3 | 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUFA76639S3S | 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUFA76645P3 | 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUFA76633P3 | 功能描述:MOSFET 38a 100V 0.036 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76633S3S | 功能描述:MOSFET 38a 100V 0.036 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76633S3ST | 功能描述:MOSFET 38a 100V 0.036 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76639P3 | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76639S3S | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。