- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384450 > HUFA76629D3 (FAIRCHILD SEMICONDUCTOR CORP) 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | HUFA76629D3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 20 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 203K |
| 代理商： | HUFA76629D3 |
2002 Fairchild Semiconductor Corporation
HUFA76629D3, HUFA76629D3S Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
25
15
20
50
75
100
125
150
0
25
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 4.5V
V
GS
= 10V
175
5
10
0.1
1
2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
10
-5
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
100
600
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 5V
V
GS
= 10V
HUFA76629D3, HUFA76629D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUFA76629D3S | 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUFA76629D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA |
| HUFA76633S3S | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUFA76633P3 | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUFA76639P3 | 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA76629D3S | 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76629D3ST | 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76633P3 | 功能描述:MOSFET 38a 100V 0.036 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76633S3S | 功能描述:MOSFET 38a 100V 0.036 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76633S3ST | 功能描述:MOSFET 38a 100V 0.036 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。