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參數(shù)資料
| 型號： | HUFA76609D3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 10 A, 100 V, 0.168 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 209K |
| 代理商： | HUFA76609D3S |
2002 Fairchild Semiconductor Corporation
HUFA76609D3, HUFA76609D3S Rev. B
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.4
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
10
100
1000
0.1
1
10
100
2000
5
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
2
4
6
8
10
0
3
6
9
12
15
0
V
G
,
V
DD
= 50V
Q
g
, GATE CHARGE (nC)
I
D
= 10A
I
D
= 7A
I
D
= 4A
WAVEFORMS IN
DESCENDING ORDER:
20
40
60
80
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 50V, I
D
= 7A
t
r
t
f
t
d(ON)
t
d(OFF)
30
60
90
120
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 50V, I
D
= 10A
t
d(OFF)
t
d(ON)
t
f
t
r
HUFA76609D3, HUFA76609D3S
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA76609D3ST | 功能描述:MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76609D3ST_F085 | 功能描述:MOSFET Trans N-CH 100V 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76609D3ST_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUFA76619D3 | 功能描述:MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76619D3S | 功能描述:MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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