參數(shù)資料
型號(hào): HUFA76504DK8T
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
中文描述: 2500 mA, 80 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
文件頁(yè)數(shù): 5/13頁(yè)
文件大?。?/td> 313K
代理商: HUFA76504DK8T
2001 Fairchild Semiconductor Corporation
Rev. A, June 4, 2001
FIGURE 11. NORMALIZED GATE
THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED
DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
10
100
1000
0.1
1
10
80
3
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
2
4
6
8
V
G
,
V
DD
= 40V
Q
g
, GATE CHARGE (nC)
I
D
= 2.5A
I
D
= 1.1A
WAVEFORMS IN
DESCENDING ORDER:
0
20
40
60
80
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
20
30
40
50
S
V
GS
= 4.5V, V
DD
= 40V, I
D
= 1.1A
t
d(OFF)
t
r
t
f
t
d(ON)
0
40
80
120
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 40V, I
D
= 2.5A
t
d(OFF)
t
r
t
d(ON)
t
f
HUFA76504DK8
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