參數(shù)資料
型號: HUFA76504DK8T
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
中文描述: 2500 mA, 80 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
文件頁數(shù): 3/13頁
文件大小: 313K
代理商: HUFA76504DK8T
2001 Fairchild Semiconductor Corporation
Rev. A, June 4, 2001
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= 4.5V, R
θ
JA
= 228
o
C/W
V
GS
= 10V, R
θ
JA
= 50
o
C/W
0.01
0.1
1
2
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
10
2
10
3
0.001
10
-5
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
R
θ
JA
= 228
o
C/W
1
10
100
200
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-5
I
D
,
t, PULSE WIDTH (s)
V
GS
= 10V
R
θ
JA
= 228
o
C/W
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
A
125
V
GS
= 4.5V
HUFA76504DK8
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