參數(shù)資料
型號： HUFA76432P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 59 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/10頁
文件大?。?/td> 216K
代理商： HUFA76432P3
2001 Fairchild Semiconductor Corporation
HUFA76432P3, HUFA76432S3S Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
I
D
= 250
μ
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
16V
60
-
-
V
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
I
D
= 59A, V
GS
= 10V (Figures 9, 10)
I
D
= 39A, V
GS
= 5V (Figure 9)
I
D
= 37A, V
GS
= 4.5V (Figure 9)
1
-
3
V
Drain to Source On Resistance
-
0.014
0.017
-
0.016
0.019
-
0.017
0.021
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-220AB and TO-263AB
-
-
1.15
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
62
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 37A
V
GS
=
4.5V, R
GS
= 6.2
(Figures 15, 21, 22)
-
-
400
ns
Turn-On Delay Time
-
14
-
ns
Rise Time
-
250
-
ns
Turn-Off Delay Time
-
26
-
ns
Fall Time
-
82
-
ns
Turn-Off Time
-
-
160
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 60A
V
GS
=
10V, R
GS
= 6.8
(Figures 16, 21, 22)
-
-
165
ns
Turn-On Delay Time
-
9.0
-
ns
Rise Time
-
100
-
ns
Turn-Off Delay Time
-
53
-
ns
Fall Time
-
107
-
ns
Turn-Off Time
-
-
240
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 39A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
44
53
nC
Gate Charge at 5V
-
24
29
nC
Threshold Gate Charge
-
1.6
2
nC
Gate to Source Gate Charge
-
4.3
-
nC
Reverse Transfer Capacitance
-
9.8
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
1765
-
pF
Output Capacitance
-
470
-
pF
Reverse Transfer Capacitance
-
75
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 39A
I
SD
= 20A
I
SD
= 39A, dI
SD
/dt = 100A/
μ
s
I
SD
= 39A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.00
V
Reverse Recovery Time
t
rr
-
-
65
ns
Reverse Recovered Charge
Q
RR
-
-
120
nC
HUFA76432P3, HUFA76432S3S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUFA76432S3S 功能描述:MOSFET Logic Level UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76432S3ST 功能描述:MOSFET Logic Level UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76437P3 功能描述:MOSFET 64a 60V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76437S3S 功能描述:MOSFET 64a 60V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76437S3ST 功能描述:MOSFET 64a 60V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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