參數(shù)資料
型號(hào): HUFA76429S3S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述: 47 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 229K
代理商: HUFA76429S3S
2001 Fairchild Semiconductor Corporation
HUFA76429D3, HUFA76429D3S Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
μ
A, V
GS
= 0V (Figure 12)
60
-
-
V
I
D
V
= 250
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
DS
= 55V, V
GS
= 0V
-
-
1
μ
μ
A
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= 20A, V
= V
DS
, I
D
= 250
μ
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
GS
= 10V (Figures 9, 10)
-
0.0205
0.023
I
D
= 20A, V
GS
= 5V (Figure 9)
-
0.024
0.027
I
D
= 20A, V
GS
= 4.5V (Figure 9)
-
0.025
0.029
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
TO-251 and TO-252
-
-
1.36
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
R
θ
JA
-
-
100
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
V
V
(Figures 15, 21, 22)
DD
GS
= 30V, I
=
4.5V, R
D
= 20A
GS
= 7.5
-
-
220
ns
Turn-On Delay Time
t
d(ON)
t
r
-
13
-
ns
Rise Time
-
134
-
ns
Turn-Off Delay Time
t
d(OFF)
t
f
t
OFF
-
30
-
ns
Fall Time
-
55
-
ns
Turn-Off Time
-
-
130
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
V
(Figures 16, 21, 22)
DD
GS
= 30V, I
=
10V,R
D
GS
= 20A
= 8.2
-
-
65
ns
Turn-On Delay Time
t
d(ON)
t
r
-
7.7
-
ns
Rise Time
-
36
-
ns
Turn-Off Delay Time
t
d(OFF)
t
f
t
OFF
-
60
-
ns
Fall Time
-
56
-
ns
Turn-Off Time
-
-
175
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
I
D
I
g(REF)
(Figures 14, 19, 20)
DD
= 20A,
= 30V,
= 1.0mA
-
38
46
nC
Gate Charge at 5V
V
GS
= 0V to 5V
-
21
25
nC
Threshold Gate Charge
V
GS
= 0V to 1V
-
1.3
1.6
nC
Gate to Source Gate Charge
-
3.8
-
nC
Gate to Drain "Miller" Charge
-
9.7
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
1480
-
pF
Output Capacitance
-
440
-
pF
Reverse Transfer Capacitance
-
90
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 20A
I
SD
= 10A
I
SD
= 20A, dI
SD
/dt = 100A/
μ
s
I
SD
= 20A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.00
V
Reverse Recovery Time
t
rr
-
-
80
ns
Reverse Recovered Charge
Q
RR
-
-
230
nC
HUFA76429D3, HUFA76429D3S
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