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參數(shù)資料
| 型號(hào)： | HUFA76419S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 197K |
| 代理商： | HUFA76419S3S |
2001 Fairchild Semiconductor Corporation
HUFA76419D3, HUFA76419D3S Rev. B
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE
CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.4
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.6
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
100
2000
0.1
1.0
10
60
20
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
1000
2
4
6
8
10
0
10
Q
g
, GATE CHARGE (nC)
15
20
25
30
0
V
G
,
V
DD
= 30V
I
D
= 20A
I
D
= 10A
WAVEFORMS IN
DESCENDING ORDER:
5
150
200
300
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 19A
t
r
t
f
t
d(ON)
t
d(OFF)
50
100
250
30
120
150
180
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 30V, I
D
= 20A
t
r
t
d(ON)
t
f
t
d(OFF)
90
60
HUFA76419D3, HUFA76419D3S
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| HUFA76423D3 | 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
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| HUFA76423P3 | 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUFA76423S3S | 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUFA76423D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA76419S3ST | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76423D3 | 功能描述:MOSFET 20a 60V 0.037 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76423D3S | 功能描述:MOSFET 20a 60V 0.037 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76423D3ST | 功能描述:MOSFET 20a 60V 0.037 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76423P3 | 功能描述:MOSFET 20a 60V 0.037 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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