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參數(shù)資料
| 型號： | HUF75639S3R4851 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 56 A, 115 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 204K |
| 代理商： | HUF75639S3R4851 |
2001 Fairchild Semiconductor Corporation
HUF75639S3R4851 Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
1000
1
10
100
200
T
J
= MAX RATED
T
C
= 25
o
C
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DSS(MAX)
= 115V
10ms
1ms
100
μ
s
LIMITED BY r
DS(ON)
AREA MAY BE
10
100
0.001
0.01
0.1
1
STARTING T
J
= 25
ο
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 150
ο
C
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
20
40
60
80
100
0
1
2
3
4
5
6
7
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 7V
V
GS
= 20V
V
GS
= 5V
V
GS
= 6V
0
20
40
60
80
100
0
1.5
3.0
4.5
6.0
7.5
-55
o
C
25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
175
o
C
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
O
V
GS
= 10V, I
D
= 56A
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
T
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
HUF75639S3R4851
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75639S3S | 功能描述:MOSFET 56a 100V N-Ch UltraFET .25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75639S3S_Q | 功能描述:MOSFET 56a 100V N-Ch UltraFET .25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75639S3ST | 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75639S3ST_Q | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75639S3ST_S2515 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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