參數(shù)資料
型號： HUF75623P3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET
中文描述： 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 4/10頁
文件大?。?/td> 199K
代理商： HUF75623P3
2001 Fairchild Semiconductor Corporation
HUF75623P3, HUF75623S3ST Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
10
300
300
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
100
100
0.001
0.01
0.1
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
10
0
20
30
40
2
3
4
6
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
5
10
0
20
30
40
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 7V
V
GS
= 6V
V
GS
= 20V
V
GS
= 10V
10
0
1.0
1.5
2.0
3.0
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 22A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
2.5
0.5
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
160
HUF75623P3, HUF75623S3ST
相關(guān)PDF資料
PDF描述
HUF75623S3 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75623S3ST 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75623S3ST 22A, 100V, 0.064 Ohm, N-Channel,UltraFET Power MOSFETs(22A, 100V, 0.064 Ω N溝道邏輯電平功率MOS場效應(yīng)管)
HUF75631S3ST 33A, 100V, 0.040 Ohm, N-Channel,UltraFET Power MOSFETs(33A, 100V, 0.040Ω N溝道邏輯電平功率MOS場效應(yīng)管)
HUF75639S3R4851 Global Limit Switches Series GLS: Wobble - Coil Spring, 2NC 2NO DPDT Snap Action, 20 mm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75623S3 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75623S35T 制造商:Intersil Corporation 功能描述:
HUF75623S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75623S3ST 功能描述:MOSFET 22a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75631P3 功能描述:MOSFET 33a 100V N-Ch UltraFET 0.40 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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