- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384445 > HUF75332P3 (INTERSIL CORP) 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應管) PDF資料下載
參數(shù)資料
| 型號： | HUF75332P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應管) |
| 中文描述： | 60 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 14/18頁 |
| 文件大?。?/td> | 210K |
| 代理商： | HUF75332P3 |
98
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
160
200
0.5
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 60A
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.1
1.2
-40
0
40
80
120
160
200
0.9
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
0
500
1000
1500
2000
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
2
4
6
8
10
10
20
30
40
50
60
0
0
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 60A
I
D
= 45A
I
D
= 30A
I
D
= 15A
WAVEFORMS IN
DESCENDING ORDER:
HUF75332G3, HUF75332P3, HUF75332S3S
相關PDF資料 |
PDF描述 |
|---|---|
| HUF75332G3 | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應管) |
| HUF75332S3S | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應管) |
| HUF75337P3 | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75337S3S | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75337G3 | TRANSISTOR 45V PNP SMD SOT-23 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75332P3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75332S3 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75332S3S | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75332S3ST | 功能描述:MOSFET 60a 55V 0.019 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75333G3 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復。