參數(shù)資料
型號: HTMS8301FUG
廠商: NXP Semiconductors N.V.
元件分類: 通信及網(wǎng)絡(luò)
英文描述: ISO 18000 transponder IC
封裝: HTMS1301FTB/AF<sot1122 (XSON3)|<<http://www.nxp.com/packages/sot1122.html<1<Always Pb-free,;HTMS1301FUG/AM<Uncased die|<<<1<Always Pb-free,;HTMS8301FTB/AF<sot1122
文件頁數(shù): 5/44頁
文件大?。?/td> 719K
代理商: HTMS8301FUG
184430
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.0 — 18 March 2010
184430
5 of 44
NXP Semiconductors
HITAG μ
ISO 18000 transponder IC
7. Mechanical specification
7.1 Wafer specification
See
Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die marking”
.
7.1.1
Wafer
Designation:
each wafer is scribed with batch number and
wafer number
Diameter:
Thickness:
Process:
Batch size:
PGDW:
200 mm (8”)
150
μ
m ± 15
μ
m
CMOS 0.14 μm
25 wafers
91981
7.1.2
Wafer backside
Material:
Treatment:
Roughness:
Si
ground and stress release
R
a
max. 0.5
μ
m, R
t
max. 5
μ
m
7.1.3
Chip dimensions
Die size without scribe:
Scribe line width:
X-dimension:
550
μ
m x 550
μ
m = 302500
μ
m
2
15
μ
m (scribe line width is measured between
nitride edges)
15
μ
m (scribe line width is measured between
nitride edges)
Y-dimension:
Number of pads:
5
7.1.4
Passivation on front
Type:
Material:
Thickness:
sandwich structure
PE-Nitride (on top)
1.75
μ
m total thickness of passivation
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