參數(shù)資料
型號: HTMS8201FTK
廠商: NXP Semiconductors N.V.
元件分類: 通信及網(wǎng)絡
英文描述: HITAG ?; Transponder IC
封裝: HTMS1001FTB/AF<sot1122 (XSON3)|<<http://www.nxp.com/packages/sot1122.html<1<Always Pb-free,;HTMS1001FTK/AF<SOT899-1 (HVSON2)|<<http://www.nxp.com/packages/SOT899-1.html&l
文件頁數(shù): 8/58頁
文件大?。?/td> 844K
代理商: HTMS8201FTK
152931
NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.1 — 21 January 2010
152931
8 of 58
NXP Semiconductors
HITAG μ
Transponder IC
6.1.5
Au bump
Bump material:
Bump hardness:
Bump shear strength:
Bump height:
Bump height uniformity:
within a die:
within a wafer:
wafer to wafer:
Bump flatness:
Bump size:
LA, LB
TEST, GND, VDD
Bump size variation:
Under bump metallization:
> 99.9% pure Au
35 – 80 HV 0.005
> 70 MPa
18
μ
m
± 2
μ
m
± 3
μ
m
± 4
μ
m
± 1.5
μ
m
294 x 164
μ
m
60 x 60
μ
m
±
5
μ
m
sputtered TiW
6.1.6
Fail die identification
No inkdots are applied to the wafer.
Electronic wafer mapping (SECS II format) covers the electrical test results and
additionally the results of mechanical/visual inspection.
See
Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die marking”
.
6.1.7
Map file distribution
See
Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die marking”
.
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