參數(shù)資料
型號(hào)： HTMS1301FUG
廠商： NXP Semiconductors N.V.
元件分類： 通信及網(wǎng)絡(luò)
英文描述： ISO 18000 transponder IC
封裝： HTMS1301FTB/AF<sot1122 (XSON3)|<<http://www.nxp.com/packages/sot1122.html<1<Always Pb-free,;HTMS1301FUG/AM<Uncased die|<<<1<Always Pb-free,;HTMS8301FTB/AF<sot1122
文件頁(yè)數(shù)： 33/44頁(yè)
文件大小： 719K
代理商： HTMS1301FUG
184430
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.0 — 18 March 2010
184430
33 of 44
NXP Semiconductors
HITAG μ
ISO 18000 transponder IC
16. Limiting values
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[2]
This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static
charge. Nonetheless, it is suggested that conventional precautions should be taken to avoid applying values greater than the rated
maxima
17. Characteristics
[1]
Typical ratings are not guaranteed. Values are at 25
°
C
.
[2]
Measured with an HP4285A LCR meter at 125 kHz/room temperature (25
°
C)
[3]
Integrated Resonance Capacitor: 210pF
±
3%
[4]
Integrated Resonance Capacitor: 280pF
±
5%
Table 33.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
[1][2]
Symbol
Parameter
Conditions
Min
55
±
2
Max
Unit
°
C
T
stg
V
ESD
storage temperature
+125
electrostatic discharge voltage
JEDEC JESD 22-A114-AB
Human Body Model
-
kV
I
i(max)
Tj
maximum input current
IN1-IN2
40
±
20
mA
peak
°
C
junction temperature
+85
Table 34.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
f
oper
V
IN1-IN2
I
I
C
i
operating frequency
100
125
150
kHz
input voltage
4
5
6
±
10
V
peak
mA
peak
pF
input current
IN1-IN2
-
-
input capacitance between
IN1-IN2
V
IN1-IN2
= 0.5 V
rms
[2][3]
203.7
210
216.3
C
i
input capacitance between
IN1-IN2
V
IN1-IN2
= 0.5 V
rms
[2][4]
266
280
294
pF
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