參數(shù)資料
型號： HTMS1001FUG
廠商： NXP Semiconductors N.V.
元件分類： 通信及網(wǎng)絡
英文描述： HITAG ?; Transponder IC
封裝： HTMS1001FTB/AF<sot1122 (XSON3)|<<http://www.nxp.com/packages/sot1122.html<1<Always Pb-free,;HTMS1001FTK/AF<SOT899-1 (HVSON2)|<<http://www.nxp.com/packages/SOT899-1.html&l
文件頁數(shù)： 45/58頁
文件大?。?/td> 844K
代理商： HTMS1001FUG
152931
NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.1 — 21 January 2010
152931
45 of 58
NXP Semiconductors
HITAG μ
Transponder IC
16. Limiting values
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[2]
This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static
charge. Nonetheless, it is suggested that conventional precautions should be taken to avoid applying values greater than the rated
maxima
17. Characteristics
[1]
Typical ratings are not guaranteed. Values are at 25
°
C
.
Measured with an HP4285A LCR meter at 125 kHz/room temperature (25
°
C)
[2]
[3]
Integrated Resonance Capacitor: 210pF
±
3%
[4]
Integrated Resonance Capacitor: 280pF
±
5%
Table 45.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
T
stg
storage temperature
V
ESD
electrostatic discharge voltage
Limiting values
[1][2]
Conditions
Min
55
±
2
Max
+125
-
Unit
°
C
kV
JEDEC JESD 22-A114-AB
Human Body Model
IN1-IN2
I
i(max)
Tj
maximum input current
junction temperature
40
±
20
+85
mA
peak
°
C
Table 46.
Symbol
f
oper
V
IN1-IN2
I
I
C
i
Characteristics
Parameter
operating frequency
input voltage
input current
input capacitance between
IN1-IN2
input capacitance between
IN1-IN2
Conditions
Min
100
4
-
203.7
Typ
125
5
-
210
Max
150
6
±
10
216.3
Unit
kHz
V
peak
mA
peak
pF
IN1-IN2
V
IN1-IN2
= 0.5 V
rms
[2][3]
C
i
V
IN1-IN2
= 0.5 V
rms
[2][4]
266
280
294
pF
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