參數(shù)資料
型號(hào): HTCICC6402FUG
廠商: NXP Semiconductors N.V.
元件分類: 通信及網(wǎng)絡(luò)
英文描述: HTCICC64; HITAG ? RO64 transponder IC
封裝: HTCICC6402FUG/AM<Uncased die|<<<1<Always Pb-free,;HTCICC6403FUG/AM<Uncased die|<<<1<Always Pb-free,;
文件頁(yè)數(shù): 7/13頁(yè)
文件大小: 317K
代理商: HTCICC6402FUG
176431
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3.1 — 24 July 2009
7 of 13
NXP Semiconductors
HTCICC64
HITAG μ RO64 transponder IC
8.
Limiting values
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[2]
This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static
charge. Nonetheless, it is suggested that conventional precautions should be taken to avoid applying values greater than the rated
maxima
9.
Characteristics
[1]
Typical ratings are not guaranteed. Values are at 25
°
C
.
[2]
Measured with an HP4285A LCR meter at 125 kHz/room temperature (25
°
C)
[3]
Integrated Resonance Capacitor: 210 pF
±
3 %
[4]
Integrated Resonance Capacitor: 280 pF
±
5%
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
[1][2]
Symbol
Parameter
Conditions
Min
55
±
2
Max
Unit
°
C
T
stg
V
ESD
storage temperature
+125
electrostatic discharge voltage
JEDEC JESD 22-A114-AB
Human Body Model
-
kV
I
I(max)
Tj
maximum input current
IN1-IN2
40
±
20
mA
peak
°
C
junction temperature
+85
Table 5.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
f
oper
I
I
V
IN1-IN2
C
i
C
i
operating frequency
100
125
150
±
10
kHz
input current
IN1-IN2
-
-
mA
peak
V
peak
pF
input voltage
4
5
6
input capacitance between IN1-IN2
V
IN1-IN2
= 0.5 V
rms
V
IN1-IN2
= 0.5 V
rms
[2][3]
203.7
210
216.3
input capacitance between IN1-IN2
[2][4]
266
280
294
pF
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