參數(shù)資料
型號(hào): HS9-5104ARH
廠商: Intersil Corporation
英文描述: Radiation Hardened Low Noise Quad Operational Amplifier
中文描述: 輻射加固四低噪聲運(yùn)算放大器
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 24K
代理商: HS9-5104ARH
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
(2420
μ
m x 2530
μ
m x 483
μ
m
±
25.4
μ
m)
95 x 99 x 19mils
±
1mil
METALLIZATION:
Type: Al Si Cu
Thickness: 16.0k
±
2k
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: Nitride (Si
3
N
4
) over Silox (S
i
O
2
)
Nitride Thickness: 3.5k
±
1.5k
Silox Thickness: 12.0k
±
2k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
175
PROCESS:
Bipolar DI
Metallization Mask Layout
HS-5104ARH-T
+IN2
V+
+IN1
-IN1
OUT1
OUT4
-IN4
-IN3
OUT3
OUT2
-IN2
+IN4
V-
+IN3
HS-5104ARH-T
相關(guān)PDF資料
PDF描述
HS9-5104ARH-T RESISTOR; SMT; FILM;15.0 OHM;250.0 MW
HS1-5104ARH-Q Radiation Hardened Low Noise Quad Operational Amplifier
HS9-5104ARH-Q Radiation Hardened Low Noise Quad Operational Amplifier
HS1-6254RH Radiation Hardened Ultra High Frequency NPN Transistor Array
HS-6254RH Radiation Hardened Ultra High Frequency NPN Transistor Array(抗輻射甚高頻NPN晶體管陣列)
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