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參數(shù)資料
| 型號： | HS9-1410RH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | Radiation Hardened, High Speed, Low Power, Current Feedback Op Amp with Output Disable |
| 中文描述： | OP-AMP, PDFP10 |
| 封裝： | CERAMIC, DFP-10 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | HS9-1410RH-Q |
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
59 mils x 59 mils x 19 mils
±
1 mil
(1500
μ
m x 1500
μ
m x 483
μ
m
±
25.4
μ
m)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4k
±
0.5k
Top Metallization:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
±
0.4k
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
±
0.8k
Substrate:
UHF-1, Bonded Wafer, DI
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Floating (Recommend Connection to V-)
ADDITIONAL INFORMATION:
Transistor Count:
75
Metallization Mask Layout
HS-1410RH
NOTE: This pad is not bonded out on packaged units. Die users may set a GND reference, via this pad, to ensure the TTL compatibility of the DIS
input when using asymmetrical supplies (e.g. V+ = 10V, V- = 0V).
V-
OPTIONAL GND (NOTE)
OUT
+IN
-IN
V+
DISABLE
HS-1410RH
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