參數(shù)資料
型號(hào)： HS1-81C56RH
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： DRAM
英文描述： Radiation Hardened 256 x 8 CMOS RAM
中文描述： 256 X 8 MULTI-PORT SRAM, 250 ns, CDIP40
文件頁(yè)數(shù)： 4/14頁(yè)
文件大?。?/td> 86K
代理商： HS1-81C56RH
4
Specifications HS-81C55RH, HS-81C56RH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Typical Derating Factor. . . . . . . . . . . . 2mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25.0mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . .22.2mW/
o
C
θ
JA
θ
JC
40.0
o
C/W
45.0
o
C/W
5.0
o
C/W
5.0
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . +4.75V to +5.25V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . VDD -0.5V to VDD
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
High Input Leakage
Current
IIH
VDD = 5.25V, VIN = 0V,
Pin under test = VDD
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
1
μ
A
Low Input Leakage
Current
IIL
VDD = 5.25V, VIN = 5.25V,
Pin under test = 0V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-1
-
μ
A
Low Output Voltage
VOL
VDD = 5.25V, IOL = 2mA
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
0.5
V
High Output Voltage
VOH
VDD = 4.75V, IOH = 2mA
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
4.25
-
V
Static Current
IDDSB
VDD = 5.25V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
200
μ
A
Dynamic Current
IDDOP
VDD = 5.25V, f = 1MHz
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
2
mA
Functional Tests
FT
VDD = 4.75V and 5.25V,
VIH = VDD-0.5V, VIL = 0.8V
7, 8A, 8B
-55
o
C, +25
o
C,
+125
o
C
-
-
-
NOTE: All devices are guaranteed at worst case limits and over radiation. Dynamic current is proportional to operating frequency (2mA/MHz).
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Address Latch Setup Time
TAL
Notes 1, 4
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
60
-
ns
Address Hold Time After Latch
TLA
Notes 1, 4
9, 10, 11
60
-
ns
Latch to READ/WRITE Control
TLC
Notes 1, 4
9, 10, 11
200
-
ns
Valid Data Out From Read Control
TRD
Notes 1, 4
9, 10, 11
-
250
ns
Address Stable to Data Out Valid
TAD
Notes 1, 4
9, 10, 11
-
500
ns
Latch Enable Width
TLL
Notes 1, 4
9, 10, 11
200
-
ns
READ/WRITE Control to Latch
Enable
TCL
Notes 1, 4,7
9, 10, 11
20
-
ns
READ/WRITE Control Width
TCC
Notes 1, 4
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
250
-
ns
Data In to WRITE Setup Time
TDW
Notes 1, 4
9, 10, 11
200
-
ns
Data In Hold Time After WRITE
TWD
Notes 1, 4
9, 10, 11
25
-
ns
Spec Number
518056
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