參數(shù)資料
型號(hào)： HRF3205S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
中文描述： 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 7/8頁
文件大?。?/td> 82K
代理商： HRF3205S
4-35
PSPICE Electrical Model
SUBCKT HRF3205P3 2 1 3 ;
rev 7/25/97
CA 12 8 4.9e-9
CB 15 14 4.9e-9
CIN 6 8 3.45e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 57
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.6e-9
LSOURCE 3 7 1.1e-9
K1 LGATE LSOURCE 0.0085
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.5e-4
RGATE 9 20 0.36
RLDRAIN 2 5 10
RLGATE 1 9 26
RLSOURCE 3 7 11
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 4.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*550),3))}
.MODEL DBODYMOD D (IS = 4.25e-12 RS = 1.8e-3 TRS1 = 2.75e-3 TRS2 = 5e-6 CJO = 5.95e-9 TT = 4e-7 M = 0.55)
.MODEL DBREAKMOD D (RS = 0.06 IKF = 30 TRS1 = -3e-3 TRS2 = 3e-6)
.MODEL DPLCAPMOD D (CJO = 4.45e-9 IS = 1e-30 N = 1 M = 0.88 VJ = 1.45)
.MODEL MMEDMOD NMOS (VTO = 2.93 KP = 9.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1)
.MODEL MSTROMOD NMOS (VTO = 3.23 KP = 150 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.35 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 10)
.MODEL RBREAKMOD RES (TC1 = 8e-4 TC2 = 4e-6)
.MODEL RDRAINMOD RES (TC1 = 8e-2 TC2 = 5e-6)
.MODEL RSLCMOD RES (TC1 = 1e-4 TC2 = 1.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-4 TC2 = 1.5e-5)
.MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.2e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.2e-3 TC2 = -7e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -9 VOFF= -4)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4 VOFF= -9)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 2.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.5 VOFF= 0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HRF3205, HRF3205S
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