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參數(shù)資料
| 型號： | HRF3205S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs |
| 中文描述： | 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 82K |
| 代理商： | HRF3205S |
4-31
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
MOSFET
Symbol Showing
The Integral
Reverse P-N
Junction Diode
-
-
100
(Note 1
A
Pulsed Source to Drain Current (Note 2)
I
SDM
-
-
390
A
Source to Drain Diode Voltage
V
SD
I
SD
= 59A (Note 4)
-
-
1.3
V
Reverse Recovery Time
t
rr
I
SD
= 59A, dI
SD
/dt = 100A/
μ
s (Note 4)
-
110
170
ns
Reverse Recovered Charge
Q
RR
I
SD
= 59A, dI
SD
/dt = 100A/
μ
s (Note 4)
-
450
680
nC
NOTE:
2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11)
Typical Performance Curves
FIGURE 1. OUTPUT CHARACTERISTICS
FIGURE 2. OUTPUT CHARACTERISTICS
FIGURE 3. TRANSFER CHARACTERISTICS
FIGURE 4. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
D
G
S
10
100
1000
0.1
1.0
10
100
20
μ
s PULSE WIDTH
T
C
= 25
C
V
GS
IN DECENDING ORDER
15V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
100
1000
I
D
,
0.1
1
10
100
20
μ
s PULSE WIDTH
T
C
= 175
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
15V
V
GS
IN DECENDING ORDER
1
10
100
1000
3
4.5
6
7.5
9
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
= 25V
T
J
= 25
o
C
T
J
= 175
o
C
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
I
D
= 98A, V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
O
T
J
, JUNCTION TEMPERATURE (
o
C)
HRF3205, HRF3205S
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