參數(shù)資料
型號(hào): HRF3205S
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
中文描述: 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 82K
代理商: HRF3205S
4-29
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HRF3205, HRF3205S
100A, 55V 0.008 Ohm, N-Channel, Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
NOTE: Calculated continuous current based on maximum
allowable junction temperature. Package limited to 75A
continuous, see Figure 9.
Features
100A, 55V (See Note)
Low On-Resistance, r
DS(ON)
= 0.008
Temperature Compensating PSPICE
Model
Thermal Impedance SPICE Model
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HRF3205
TO-220AB
HRF3205
HRF3205S
TO-263AB
HRF3205S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.
D
G
S
DRAIN
GATE
SOURCE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
June 1999
File Number
4447.4
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