參數(shù)資料
型號： HRF3205
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
中文描述： 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/8頁
文件大小： 82K
代理商： HRF3205
4-30
Absolute Maximum Ratings
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Drain Current
Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
T
C
= 25
o
C, Unless Othewise Specified
55
55
V
V
V
±
20V
100
390
A
A
Figure 10
175
1.17
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
20V
Reference to 25
o
C, I
D
= 250
μ
A
55
-
-
V
Gate to Source Threshold Voltage
2
-
4
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
-
-
100
nA
Breakdown Voltage Temperature
Coefficient
V
(BR)DSS
/
T
J
r
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
S
-
0.057
-
V
Drain to Source On Resistance
I
D
= 59A, V
GS
= 10V (Figure 4)
V
DD
= 28V, I
D
59A,
R
L
= 0.47
, V
GS
=
10V,
R
GS
= 2.5
-
0.0065
0.008
Turn-On Delay Time
-
14
-
ns
Rise Time
-
100
-
ns
Turn-Off Delay Time
-
43
-
ns
Fall Time
-
70
-
ns
Total Gate Charge
V
DD
= 44V, I
D
59A,
V
GS
= 10V, I
g(REF)
= 3mA
(Figure 6)
-
-
170
nC
Gate to Source Charge
-
-
32
nC
Gate to Drain “Miller” Charge
-
-
74
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 5)
-
4000
-
pF
Output Capacitance
-
1300
-
pF
Reverse Transfer Capacitance
-
480
-
pF
Internal Source Inductance
Measured From the Contact
Screw on Tab to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices In-
ductances
-
7.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Internal Drain Inductance
L
D
Measured From the Source
Lead, 6mm (0.25in) From Head-
er to Source Bonding Pad
-
4.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
0.85
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
TO-220
-
-
62
TO-263 (PCB Mount, Steady State)
-
-
40
L
S
L
D
G
D
S
HRF3205, HRF3205S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HRF3205_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HRF3205_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HRF3205F102 制造商:Fairchild Semiconductor Corporation 功能描述:
HRF3205L 制造商:Rochester Electronics LLC 功能描述:- Bulk
HRF3205S 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
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