參數(shù)資料
型號(hào): HPLU3103
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: IND,Non-Specified,1uH,20+% Tol,20-% Tol,1816-Case RoHS Compliant: Yes
中文描述: 52 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù): 4/7頁
文件大小: 117K
代理商: HPLU3103
2001 Fairchild Semiconductor Corporation
HPLR3103, HPLU3103 Rev. B
FIGURE 3. TRANSFER CHARACTERISTICS
FIGURE 4. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 5. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 7. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FIGURE 8. FORWARD BIAS SAFE OPERATING AREA
Typical Performance Curves
(Continued)
1
10
100
1000
2
4
6
7
9
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
20
μ
s PULSE WIDTH
V
DS
= 15V
T
J
= 25
o
C
T
J
= 150
o
C
3
5
8
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
N
O
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 46A, V
GS
= 10V
0
400
800
1200
1600
2000
2400
2800
3200
10
100
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
C
ISS
C
OSS
C
RSS
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
V
DS
= 24V
0
4
8
12
16
20
0
10
Q
G
, TOTAL GATE CHARGE (nC)
20
30
40
V
G
,
I
D
= 34A
V
DS
= 15V
10
100
1000
0.4
1.2
2.0
2.8
T
J
= 25
o
C
T
J
= 175
o
C
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
I
S
,
2.4
1.6
0.8
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 46A, V
GS
= 10V
1
10
100
1000
1
10
100
LIMITED BY r
DS(ON)
AREA MAY BE
V
DSS
MAX = 30V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10ms
1ms
100
μ
s
10
μ
s
HPLR3103, HPLU3103
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