參數(shù)資料
型號(hào)： HPLU3103
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： IND,Non-Specified,1uH,20+% Tol,20-% Tol,1816-Case RoHS Compliant: Yes
中文描述： 52 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 117K
代理商： HPLU3103
2001 Fairchild Semiconductor Corporation
HPLR3103, HPLU3103 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Othewise Specified
HPLR3103, HPLU3103
30
30
±
16V
52
390
240
89
0.71
-55 to 150
UNITS
V
V
V
A
A
mj
W
W/
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Single Pulse Avalanche Energy (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DSS
DGR
GS
D
DM
AS
D
o
o
C
J
, T
STG
L
pkg
300
260
o
o
C
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
30
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
-
-
25
μ
A
V
DS
= 24V, V
GS
= 0V, T
C
= 125
o
C
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
100
nA
Breakdown Voltage Temperature
Coefficient
V
(BR)DSS
/
T
J
Reference to 25
o
C, I
D
= 1mA
-
0.037
-
V
Drain to Source On Resistance
(Note 3)
r
DS(ON)
I
D
= 28A, V
GS
= 10V
-
-
0.019
I
D
= 23A, V
GS
= 4.5V
-
-
0.024
Turn-On Delay Time
t
d(ON)
V
R
DD
GS
= 15V, I
=3.4
D
I
g(REF)
34A, R
= 3mA
L
= 0.441
, V
GS
=
4.5V,
,
-
9
-
ns
Rise Time
t
r
-
210
-
ns
Turn-Off Delay Time (Note 3)
t
d(OFF)
-
20
-
ns
Fall Time
t
f
-
54
-
ns
Total Gate Charge
Q
g
V
I
D
V
(Figure 6)
DD
GS
= 24V
34A,
= 4.5V
-
-
50
nC
Gate to Source Charge
Q
gs
-
-
14
nC
Gate to Drain “Miller” Charge
Q
gd
-
-
28
nC
Input Capacitance
C
ISS
V
f = 1MHz (Figure 5)
DS
= 25V, V
GS
= 0V,
-
1600
-
pF
Output Capacitance
C
OSS
-
640
-
pF
Reverse Transfer Capacitance
C
RSS
-
320
-
pF
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm (0.25in)
From Package to Center of
Die
Modified MOSFET
Symbol Showing
the Internal Devic-
es Inductances
-
7.5
-
nH
Internal Drain Inductance
L
D
Measured From the Drain-
Lead, 6mm (0.25in) From
Package to Center of Die
-
4.5
-
nH
L
S
L
D
G
D
S
HPLR3103, HPLU3103
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