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參數(shù)資料
| 型號(hào)： | HP4936DYT |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO |
| 中文描述： | 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | HP4936DYT |
2001 Fairchild Semiconductor Corporation
HP4936DY Rev. B
FIGURE 7. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
TO SOURCE VOLTAGE
FIGURE 9. GATE THRESHOLD VOLTAGE VARIANCE vs
JUNCTION TEMPERATURE
FIGURE 10. SINGLE PULSE POWER CAPABILITY vs PULSE
WIDTH
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.001
0.01
0.1
1
10
100
0.2
0.4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
0.6
0.8
1.0
1.2
I
S
,
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.8% MAX
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
I
D
= 5.8A
0
0.01
0.02
0.03
0.04
0.05
0.08
0.07
0.06
0.09
D
,
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.8% MAX
-0.8
-0.6
-0.4
-0.2
0
-25
V
G
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
0
25
50
75
100
125
-50
150
0.4
0.2
t, PULSE WIDTH (s)
P
0
10
20
30
40
50
0.01
0.10
1.00
10.00
t, RECTANGULAR PULSE DURATION (s)
10
-1
1
2
0.1
1
10
-2
Z
θ
J
,
T
0.01
10
-3
SINGLE PULSE
NOTES:
DUTY CYCLE, D = t
1
/t
2
T
J
= P
D
x Z
θ
JA
x R
θ
JA
+ T
A
SURFACE MOUNTED
P
DM
t
1
t
2
10
DUTY CYCLE = 0.5
0.2
30
0.1
0.05
0.02
10
-4
HP4936DY
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