參數(shù)資料
型號(hào)： HMC356LP3E
廠商： HITTITE MICROWAVE CORP
元件分類： 放大器
英文描述： 350 MHz - 550 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： 3 X 3 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-16
文件頁(yè)數(shù)： 4/6頁(yè)
文件大小： 272K
代理商： HMC356LP3E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
A
M
P
L
IF
IE
R
S
-
L
O
W
NO
IS
E
-
SM
T
7
7 - 49
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+4.5
103
+5.0
104
+5.5
105
Drain Bias Voltage (Vdd)
+8.0 Vdc
RF Input Power (RFIN)(Vdd = +5.0 Vdc)
+15 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C)
0.910 W
Thermal Resistance
(channel to ground paddle)
71.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Absolute Maximum Ratings
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v03.0610
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC356LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
356
XXXX
HMC356LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
356
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMC356LP3ETR 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA HI IP3 16-QFN
HMC3587LP3BE 功能描述:RF Amplifier IC General Purpose 4GHz ~ 10GHz 12-SMT (3x3) 制造商:analog devices inc. 系列:- 包裝:剪帶 零件狀態(tài):有效 頻率:4GHz ~ 10GHz P1dB:11dBm 增益:14.5dB 噪聲系數(shù):4.5dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:47mA 測(cè)試頻率:4GHz ~ 5GHz 封裝/外殼:12-VFQFN 裸露焊盤 供應(yīng)商器件封裝:12-SMT（3x3） 標(biāo)準(zhǔn)包裝:1
HMC3587LP3BETR 功能描述:RF Amplifier IC General Purpose 4GHz ~ 10GHz 12-SMT (3x3) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):停產(chǎn) 頻率:4GHz ~ 10GHz P1dB:11dBm 增益:14.5dB 噪聲系數(shù):4.5dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:47mA 測(cè)試頻率:4GHz ~ 5GHz 封裝/外殼:12-VFQFN 裸露焊盤 供應(yīng)商器件封裝:12-SMT（3x3） 標(biāo)準(zhǔn)包裝:1
HMC358MS8G 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz
HMC358MS8G_07 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz
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