參數(shù)資料
型號(hào)： HIP2060
廠商： Intersil Corporation
英文描述： 60V, 10A Half Bridge Power MOSFET Array(60V, 10A半橋功率MOSFET陣列)
中文描述： 60V的10A條半橋式功率MOSFET陣列（60V的10A條半橋功率MOSFET的陣列）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 59K
代理商： HIP2060
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HIP2060
60
UNITS
V
Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . .V
DS
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
SD
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . I
DM
Continuous Drain Current, each Output, all Outputs on (Note 2). . . . . . . . . . . . . . . . . . . . . . . .I
DS
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Continuous Power Dissipation at T
C
= 25
o
C (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . P
D
Continuous Power Dissipation, Derate above T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . θ
JA
Operating Case Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . V
D1S2
NOTES:
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. V
DD
= 25V, Start T
J
= 25
o
C, L = 1.5mH, R
GS
= 50
, R = 0. See Figures 2, 12, and 13.
60
V
±
20
V
10
A
25
A
10
A
100
mJ
46
W
0.37
W/
o
C
o
C/W
o
C
o
C
o
C
60
-40 to 125
-40 to 150
300
60
V
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 100
μ
A, V
GS
= 0V
T
C
= -40
o
C to
125
o
C
60
-
-
V
T
C
= 25
o
C
-
70
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1.5
2.3
2.7
V
Drain1-Source2 Breakdown Voltage
(Across D1)
BV
D1S2
I
D1S2
= 1
μ
A,
V
G1S1,
V
G2S2
= 0V
T
C
= 25
o
C
-
105
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V
V
GS
= 0V
T
C
= 25
o
C
-
-
1
μ
A
Drain1-Source2 Current (Through D1)
I
D1S2
V
D1S2
= 60V
V
G1S1
= 0V, V
G2S2
= 0V
T
C
= 25
o
C
-
0.3
1
μ
A
T
C
= 125
o
C
-
1
-
μ
A
Drain-Source On-State Voltage
(Note 4)
V
DS(ON)
I
D
= 10A, V
GS
= 15V
-
0.9
1.25
V
I
D
= 10A, V
GS
= 10V
-
1.1
1.5
V
Forward Gate Current, Drain Short
Circuited to Source
I
GSSF
V
DS
= 0V, V
GS
= 20V
-
-
100
nA
Reverse Gate Current, Drain Short
Circuited to Source
I
GSSR
V
DS
= 0V, V
GS
= -20V
-
-
-100
nA
Drain-Source On Resistance (Note 4)
r
DS(ON)
V
GS
= 15V, I
D
= 10A
T
C
= 25
o
C
-
0.09
0.135
V
GS
= 15V, I
D
= 10A
T
C
= 125
o
C
-
0.15
0.21
V
GS
= 10V, I
D
= 10A
T
C
= 25
o
C
-
0.11
0.15
V
GS
= 10V, I
D
= 10A
T
C
= 125
o
C
-
0.19
0.25
Forward Transconductance (Note 4)
g
fs
V
DS
= 15V, I
D
= 5A
-
4.5
-
S
HIP2060
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PDF描述
HIP2060AS1 60V, 10A Half Bridge Power MOSFET Array
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HIP2060 WAF 制造商:Intersil Corporation 功能描述:
HIP2060AS1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:60V, 10A Half Bridge Power MOSFET Array
HIP2060AS2 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:60V, 10A Half Bridge Power MOSFET Array
HIP2060AS3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:60V, 10A Half Bridge Power MOSFET Array
HIP2060ASE 制造商:Rochester Electronics LLC 功能描述:- Bulk
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