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參數(shù)資料
| 型號(hào)： | HIP1090AS |
| 廠商： | INTERSIL CORP |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 20000 SYSTEM GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 1 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SIP-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 34K |
| 代理商： | HIP1090AS |
9-25
HIP1090
Figure 3 shows the pulsed output switching characteristics
of the HIP1090 as a high side driver. A small delay step is
noted on the rising edge due to the hold-off of a V
CE
SAT
detector circuit. The V
CE
SAT circuit senses the saturation
level of the PNP pass transistor and controls the drive as a
ratio of load current. As the load current is reduced, the drive
current to the output transistor is reduced. Under low current
operation, the saturation level is controlled and the turn-OFF
switching time is much faster. The control switching element
is shown as a 2N5320 NPN transistor but may be any open
collector or MOS gate. A pull-up resistor of 2k
is used for a
slight improvement in the turnoff fall time but is not an
essential requirement. The V
CON
terminal may be controlled
with a mechanical switch or may be controlled from any
driver output that can sink the worst case condition of pin 2
current, I
CON
when the output load current is increased to 1A
(typically 50mA).
FIGURE 3. TYPICAL ON-OFF SWITCHING CHARACTERISTIC
OF THE HIP1090 USING AN NPN TRANSISTOR TO
SWITCH THE V
CON
INPUT TERMINAL
HIP1090
V
CON
(CONTROL PIN)
V
OUT
V
IN
+16V
1k
2k
2N5320
OR EQUIVALENT
(OUTPUT)
(SUPPLY INPUT)
V
B
15
μ
s
15
μ
s
15
10
5
0
V
OUT
V
B
ON
OFF
T
ON
T
OFF
ON
OFF
24
OPTIONAL
The circuit of Figure 4 shows how the HIP1090 transient
suppression voltage shutdown threshold may be increased
by using a zener diode from the V
CON
terminal to the collec-
tor terminal of the transistor switch. The preferred method is
to use a zener diode for a fixed level shift. While a resistor in
place of the zener diode having the same voltage drop will
work well, the parametric variation of the I
CON
current will
cause variations of the Over-Voltage Shutdown Threshold.
In this circuit, a 10V zener provides a typical over-voltage
threshold shift to ~27V. The threshold for over-voltage shut-
down is referenced to the (V
IN
- V
CON
) voltage difference.
FIGURE 4. A TYPICAL APPLICATION CIRCUIT THAT USES A
ZENER TO THE V
CON
TRANSISTOR SWITCH TO
RAISE
THE
OVER-VOLTAGE
THRESHOLD
SHUTDOWN
Also, it is important to note that high peak current values
may be reached when driving nonlinear and inductive loads.
The peak output current of the HIP1090 is self limiting in the
1A to 2A range to protect against short circuit conditions.
Sustained high peak current may increase the junction tem-
perature to 150
o
C and cause thermal shutdown. When this
happens, the output current will fall off briefly before recover-
ing, unless the over-temperature condition is sustained.
Internally, both input and output over-voltage conditions are
sensed to protect the circuit, making the high levels of tran-
sient voltage ratings possible. Sustained voltage ratings of
±
24VDC with transient ratings to
±
90V allow a wide variety
of applications in high stress environments.
Except for the V
CE
SAT detector circuit, the HIP1090 is a
higher current version of the CA3273 high side driver, which
turns-on without the delayed step on the leading edge of the
output pulse; switching with a typical T
ON
time of ~0.5
μ
s.
The CA3273 has a higher transient suppression threshold.
HIP1090
V
CON
V
OUT
V
IN
+24V
1k
2N5320
OR EQUIVALENT
(OUTPUT)
(SUPPLY INPUT)
ON
OFF
24
10V
2k
OPTIONAL
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