參數(shù)資料
型號(hào)： HIP1090
廠商： Intersil Corporation
英文描述： Protected High Side Power Switch with Transient Suppression
中文描述： 保護(hù)高側(cè)電源開(kāi)關(guān)的瞬態(tài)抑制
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 34K
代理商： HIP1090
9-23
Specifications HIP1090
Absolute Maximum Ratings
Thermal Information
Input (Supply) Voltage, V
IN
(Control Pin Reference) . . . . . . . .
±
24V
Transient Max Voltage, V
IN
(15ms) . . . . . . . . . . . . . . . . . . . . .
±
90V
Load Current, I
OUT
. . . . . . . . . . . . . . . . . . . . Short Circuit Protected
Thermal Resistance
Plastic SIP Package . . . . . . . . . . . . . . . .
Maximum Power Dissipation, (Note 4)
At T
A
= +105
o
C, Infinite Heat Sink. . . . . . . . . . . . . . . . . . . 11.25W
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150
o
C
Ambient Temperature Range . . . . . . . . . . . . . . . . -40
o
C to +125
o
C
Storage Temperature Range. . . . . . . . . . . . . . . . . .-40
o
C to +150
o
C
Lead Temperature (Soldering During). . . . . . . . . . . . . . . . . . +265
o
C
1/16
±
1/32 inch (1.59
±
0.79mm) from case for 10s maximum
θ
JA
θ
JC
4
o
C/W
50
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
A
= -40
o
C to +125
o
C; V
IN
= 4V to 16V; V
CON
= GND or 0V, Unless Otherwise Specified
PARAMETERS
SYMBOL
V
IN
TEST CONDITIONS
(Note 1); Also, See Figure 4 for
Expanding V
IN
Range
Load = 1k
MIN
4
TYP
-
MAX
16
UNITS
V
Input (Supply) Voltage Operating
Range
Input Voltage Threshold for Forward
Turn-On to Load
Input Voltage for Output Shutdown
Output Shutdown Leakage
Output Cutoff Leakage
Thermal Shutdown Temperature
Maximum Output Transient Pulse
Current
Maximum Control Transient Pulse
Current
Short Circuit Current
Input-to-Output Voltage Drop
V
THD
-
2.5
-
V
V
SHSD
I
LEAK1
I
LEAK2
T
SD
I
OUT
(Tran)
(Note 2)
V
IN
= 19V and 24V; Load = 1k
V
IN
= 16V; Control Open; Load = 1k
16
-
-
-
-20
-
-
1
19
100
-
-
+20
V
μ
A
μ
A
o
C
mA
150
-
V
IN
=
±
90V for 15ms, V
OUT
= 14V
I
CON
(Tran)
V
IN
=
±
90V for 15ms, V
OUT
= 14V
-50
-
+50
mA
I
SC
1
-
-
-
-
-
-
-
-
-
-
-
-
2
A
V
V
V
V
V
IN
= 4V, I
OUT
= 175mA
V
IN
= 9V, I
OUT
= 500mA
V
IN
= 16V, I
OUT
= 800mA
V
IN
= 16V, I
OUT
= 1A
V
IN
= 16V, I
OUT
= 100mA
V
IN
= 16V, I
OUT
= 800mA
V
IN
= 16V, I
OUT
= 1A
Switch V
IN
0V(GND) to 5.5V; Mea-
sure V
OUT
(to 90%); Load = 1k
(Note 3)
Switch V
IN
5.5V to 0V(GND); Mea-
sure V
OUT
(to 90%); Load = 1k
(Note 3)
See Figure 3 and Figure 4 (Note 3)
0.25
0.65
1.05
-
25
50
-
20
0.8
-
-
50
-
Control Current
I
CON
mA
mA
mA
μ
s
Turn ON (Rise Time);
“Pass-Thru” Mode
t
ON
Turn OFF (Fall Time);
“Pass-Thru” Mode
t
OFF
-
-
20
μ
s
Turn ON (Rise Time);
High Pass Switch Mode
Turn OFF (Fall Time);
High Pass Switch Mode
NOTES:
1. The Input Operating Voltage is not limited by the threshold of Shutdown. The V
IN
voltage may range to
±
24V while the normal functional
switching range is typically +2.5V to +17.5V (reference to V
CON
).
2. The Output Drive is switched-off when the Input voltage(Supply pin), referenced to the Control pin exceeds the threshold shutdown
VSHSD or the input voltage is less than the forward turn-on threshold (Including negative voltages within the transient peak ratings).
3. T
ON
and T
OFF
times include Prop Delay and Rise/Fall time.
4. The worst case thermal resistance,
θ
JC
for the SIP TO-220 is 4
o
C/W. The calculation for dissipation and junction temperature rise due to
dissipation is:
P
D
= (V
IN
-V
OUT
) + (V
IN
)(I
CON
)
T
J
= T
AMBIENT
+ (P
D
) (
θ
JC
) for an infinite Heat Sink.
Derating from 150
o
C is based on the reciprocal of thermal resistance,
θ
JC
+
θ
HS
. For example: Where
θ
JC
= 4
o
C/W and given
θ
HS
= 6
o
/W
as the thermal resistance of an external Heat Sink, the junction-to-air thermal resistance,
θ
JA
= 10
o
C/W. Therefore, for the maximum allowed
dissipation, derate 0.1W/
o
C for each degree from T
AMB
to the maximum rated junction temperature of 150
o
C. If T
AMB
= 100
o
C, the maximum
P
D
is (150 - 100) x 0.1W/
o
C = 5W.
t
ON
-
15
-
μ
s
t
OFF
See Figure 3 and Figure 4 (Note 3)
-
15
-
μ
s
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