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參數(shù)資料
| 型號： | HIP0061AS2 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Potentiometer; Series:CLU; Track Resistance:100kohm; Power Rating:2W; Operating Temperature Range:-55 C to +120 C; Adjustment Type:Knob; Leaded Process Compatible:Yes; Mechanical Angle/Rotation:312 RoHS Compliant: Yes |
| 中文描述： | 3.5 A, 60 V, 0.265 ohm, 3 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SIP-7 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 60K |
| 代理商： | HIP0061AS2 |
7
PSPICE Model Listing
Device Model Netlist for the HIP0061 Power MOSFET Array
*Rev: 6/12/95
.SUBCKT HIP0061 1 2 3 4 5 6 7
X1 8 1 11 4 HIP0061_1
LS1 2 8 7.5n
X2 9 3 11 4 HIP0061_1
LS2 5 9 7.5n
X3 10 6 11 4 HIP0061_1
LS3 7 10 7.5n
LS4 4 11 7.5n
.ENDS
.SUBCKT HIP0061_1 3 2 11 9
MOS1 4 2 1 1 NMOS1
JFET 13 1 4 J1
D1 5 6 D1
DBODY 1 13 D2
DBREAK 3 7 D3
DSUB 9 13 D4
DESD1 2 12 D5
DESD2 15 12 D5
VBREAK 7 1 DC 90
C21 2 1 750P
C23 2 13 45P
C24 2 4 1100P
RDRAIN 13 14 9.0e-02
LDRAIN 14 3 7.5n
RSOURCE 1 15 17.5e-03
LSOURCE 15 11 7.5n
FDSCHRG 4 2 VMEAS 1.0
E41 5 15 4 1 1.0
VPINCH 6 8 DC 10.0
VMEAS 8 15 DC 0.0
.MODEL NMOS1 NMOS LEVEL=3 (VTO=2.75 TOX=5e-08
KP=3.150e-03 PHI=0.65 GAMMA=2.55
+ VMAX=6.42e+07 NSUB=4.33e+16 THETA=0.60973
ETA=0.0015 KAPPA=1.275
+ L=1u W=3050u)
.MODEL J1 NJF (VTO=-15.0 BETA=10.736
LAMBDA=1.15e-02 PB=0.5848 IS=+1.0e-13
+ RD=3.53e-02 ALPHA=0.2)
.MODEL D1 D (IS=1.0e-15 N=0.03 RS=1.0)
.MODEL D2 D (IS=3.0e-13 RS=2.5e-03 TT=20N
CJO=350e-12)
.MODEL D3 D (IS=1.0e-13 N=1.0 RS=2.0)
.MODEL D4 D (IS=1.0e-13 RS=2.0e-03 CJO=80e-12)
.MODEL D5 D (IS=1.0e-15 RS=1.0e-03 CJO=2.5e-12)
.ENDS
NOTE: For further discussion of the PSPICE PowerFET macromodel consult
Spicing-Up SPICE II Software for Power MOSFET Modeling
,
Harris Application Note AN8610.
HIP0061
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