參數(shù)資料
型號： HIP0061AS2
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： Potentiometer; Series:CLU; Track Resistance:100kohm; Power Rating:2W; Operating Temperature Range:-55 C to +120 C; Adjustment Type:Knob; Leaded Process Compatible:Yes; Mechanical Angle/Rotation:312 RoHS Compliant: Yes
中文描述： 3.5 A, 60 V, 0.265 ohm, 3 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SIP-7
文件頁數(shù)： 2/9頁
文件大?。?/td> 60K
代理商： HIP0061AS2
2
Absolute Maximum Ratings
T
A
= 25
o
C
Thermal Information
Drain to Source Voltage, V
DS
(Over Operating Junction and Case Temperature Range) . . . . 60V
Drain to Gate Voltage, V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate to Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . .-15, +20V
Pulsed Drain Current, I
DM
, Each Output,
All Outputs on at V
GS
= 10V (Notes 1, 2). . . . . . . . . . . . . . . . 10A
Continuous Source to Drain Diode Current, I
SD
at V
GS
= 10V (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.5A
Continuous Drain Current, I
DS
, Each Output,
All Outputs on at V
GS
= 10V (Note 2) . . . . . . . . . . . . . . . . . .3.5A
Single Pulse Avalanche Energy, E
AS
(Note 3) . . . . . . . . . . . . 100mJ
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 125
o
C
Drain to Source On-State Voltage Range . . . . . . . . . . . . 5V to 10V
Thermal Resistance (Typical, Note 4)
SIP-Vertical Package . . . . . . . . . . . . .
SIP-Gullwing Package . . . . . . . . . . . .
Maximum Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . 150
o
C
Maximum Storage Temperature Range, T
STG
. . . . -55
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300
o
C
θ
JA
(
o
C/W)
55
55
θ
JC
(
o
C/W)
3
3
Die Characteristics
Back Side Potential . . . . . . . . . . . . . . . . . . . . . . . . . V- (Source, Tab)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. V
DD
= 25V, Start T
J
= 25
o
C, L = 15mH, R
GS
= 50
, I
PEAK
= 3.5A. See Figures 1, 2, 12, and 13.
4.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 100
μ
A, V
GS
= 0V
T
C
= -40
o
C to
125
o
C
60
-
-
V
T
C
= 25
o
C
-
70
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1.8
2.3
2.7
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V
V
GS
= 0V
T
C
= 25
o
C
T
C
= 125
o
C
-
-
1
μ
A
-
-
10
μ
A
Forward Gate Current, Drain Short
Circuited to Source
I
GSSF
V
DS
= 0V, V
GS
= 20V
-
-
100
nA
Reverse Gate Current, Drain Short
Circuited to Source
I
GSSR
V
DS
= 0V, V
GS
= -15V
-
-
-100
nA
Drain to Source On Resistance (Note 5)
r
DS(ON)
V
GS
= 10V, I
D
= 3.5A
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
-
0.215
0.265
V
GS
= 10V, I
D
= 3.5A
-
0.365
0.425
V
GS
= 5V, I
D
= 2A
-
0.275
0.320
V
GS
= 5V, I
D
= 2A
-
0.465
0.5
Drain to Source On Resistance Matching
r
DS(ON)
V
GS
= 10V, I
D
= 3.5A
-
95
-
%
Forward Transconductance (Note 5)
g
fs
V
DS
= 10V, I
D
= 1A
-
2.5
-
S
Turn-On Delay Time (Note 6)
t
d(ON)
V
DD
= 30V, R
L
= 15
,
V
GS
= +10V, I
D
= 2A, R
G
= 50
See Figure 14
-
10
-
ns
Rise Time (Note 6)
t
r
-
25
-
ns
Turn-Off Delay Time (Note 6)
t
d(OFF)
-
18
-
ns
Fall Time (Note 6)
t
f
-
12
-
ns
Total Gate Charge (Note 6)
Q
g(TOT)
V
DS
= 50V, V
GS
= 10V, I
D
= 2A
See Figures 16, 17
-
8.0
9.5
nC
Gate-Source Charge (Note 6)
Q
gs
-
0.7
1.0
nC
Gate-Drain Charge (Note 6)
Q
gd
-
3.5
4.0
nC
HIP0061
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