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參數(shù)資料
| 型號： | HGTP8P50G1 |
| 廠商： | Intersil Corporation |
| 英文描述： | 8A, 500V P-Channel IGBTs |
| 中文描述： | 8A條，500V P溝道IGBT的 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 119K |
| 代理商： | HGTP8P50G1 |
5
HGTD8P50G1, HGTD8P50G1S
FIGURE 13. LATCHING CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 14. GATE THRESHOLD VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. LATCHING CURRENT AS A FUNCTION OF
COLLECTOR-EMITTER VOLTAGE
Test Circuits
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUITS
Typical Performance Curves
(Continued)
FIG. 17, CIRCUIT 1
V
CE
= -350V, V
GE
= -15V, R
G
= 25
, L = 100
μ
H
I
C
,
-3
-4
-5
-6
-7
-50
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
C
-40
0
T
C
, CASE TEMPERATURE (
o
C)
40
80
120
160
V
T
,
4.5
5.5
6.0
6.5
5.0
V
CE
= V
GE
, I
CE
= 1.0mA
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
R
o
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
P
DS
t
1
t
2
NOTES:
1. DUTY FACTOR, D =
t
1
/
t
2.PEAK T
J
= (P
DS
x Z
θ
JC
x R
θ
JC
) + T
A
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
0
10
-1
10
-3
10
-2
0
200
100
300
400
500
0
3
6
9
12
15
I
C
,
V
CE
, COLLECTOR-EMITTER (V)
T
C
= 25
o
C, V
GE
= -15V, R
G
= 25
, L = 100
μ
H
FIG. 17, CIRCUIT 1
C
R
G
= 25
L = 100
μ
H
+
-
V
CC
= 350V
CIRCUIT 1
R
G
= 25
L = 100
μ
H
+
-
C
1
V
CC
= 350V
D
1
D
1
=
GSI T
ran
Z
orb
CIRCUIT 2
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