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參數(shù)資料
| 型號： | HGTP8P50G1 |
| 廠商： | Intersil Corporation |
| 英文描述： | 8A, 500V P-Channel IGBTs |
| 中文描述： | 8A條，500V P溝道IGBT的 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 119K |
| 代理商： | HGTP8P50G1 |
3
HGTD8P50G1, HGTD8P50G1S
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 4. COLLECTOR-EMITTER SATURATION VOLTAGE
FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT. (REFER TO
APPLICATION NOTES AN7254 AND AN7260)
PULSE DURATION = 250
μ
s, DUTY CYCLE < 0.5%, V
CE
= -10V
-20
0
-4
-4
-8
-12
-16
I
C
,
-6
-8
-10
-12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
C
= +150
o
C
T
C
= -40
o
C
-14
T
C
= +25
o
C
PULSE DURATION = 250
μ
s, DUTY CYCLE < 0.5%
-6.5V
-7.0V
-9.0V
-2
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
-4
-6
-8
-10
0
-20
-16
-12
-8
-4
0
I
C
,
-8.0V
V
GE
= -15V
-12V-10V
25
50
75
100
125
150
-2
-4
-6
-8
-10
-12
-14
0
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= -15V
I
C
,
-4
0
-8
-12
-16
-20
0
-1
-2
-3
-4
-5
-6
-7
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE < 0.5%, V
GE
= -15V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
0
-5
-10
-15
-20
-25
0
100
200
300
400
500
600
700
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
0
-7.5
-15
V
G
,
V
C
0
-200
-400
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER VOLTAGE
T
J
= +25
o
C, V
GE
= -15V, I
G(REF)
= -0.391mA
V
CE
= -100V
V
CE
= -400V
V
CE
= -400V
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
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