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參數(shù)資料
| 型號： | HGTP7N60B3D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.3V 72-mc CPLD |
| 中文描述： | 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 163K |
| 代理商： | HGTP7N60B3D |
2001 Fairchild Semiconductor Corporation
HGTP7N60B3D, HGT1S7N60B3DS Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Average Rectified Forward Current at T
C
= 152
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
14
7
6
56
±
20
±
30
A
A
A
A
V
V
35A at 600V
60
0.476
-55 to 150
260
2
12
W
W/
o
C
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than I
CM
.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 50
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
100
μ
A
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
, V
GE
= 15V
-
1.8
2.1
V
-
2.1
2.4
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A, V
CE
= V
GE
3.0
5.1
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 50
,
V
GE
= 15V, L = 100
μ
H
-
-
±
100
nA
Switching SOA
SSOA
V
CE
= 480V
42
-
-
A
V
CE
= 600V
35
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.7
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0. 5BV
CES
V
GE
= 15V
-
23
28
nC
V
GE
= 20V
-
30
37
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode Both at T
J
= 25
o
C,
I
CE
= I
C110
, V
CE
= 0.8 BV
CES,
V
GE
= 15V, R
G
= 50
, L = 2mH,
Test Circuit (Figure 19)
-
26
-
ns
Current Rise Time
t
rI
-
21
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
130
160
ns
Current Fall Time
t
fI
-
60
80
ns
Turn-On Energy
E
ON
-
160
200
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
120
200
μ
J
HGTP7N60B3D, HGT1S7N60B3DS
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