參數(shù)資料
型號： HGTP5N120CN
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 25A, 1200V, NPT Series N-Channel IGBT(25A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管)
中文描述： 25 A, 1200 V, N-CHANNEL IGBT
封裝： TO-220AB ALTERNATE VERSION, 3 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 80K
代理商： HGTP5N120CN
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP5N120CN
HGT1S5N120CNS
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
25
12
40
±
20
±
30
A
A
A
V
V
30A at 1200V
167
1.33
36
-55 to 150
W
W/
o
C
mJ
o
C
300
260
8
15
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
μ
A
T
C
= 125
o
C
-
100
-
μ
A
T
C
= 150
o
C
-
-
2
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 5.5A,
V
GE
= 15V
T
C
= 25
o
C
-
2.1
2.4
V
T
C
= 150
o
C
-
2.9
3.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 45
μ
A, V
CE
= V
GE
6.0
7.0
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 25
,
V
GE
= 15V,
L = 200
μ
H, V
CE(PK)
= 1200V
25
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 5.5A, V
CE
= 0.5 BV
CES
-
10.6
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 5.5A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
45
55
nC
V
GE
= 20V
-
60
75
nC
HGTP5N120CN, HGT1S5N120CNS
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