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參數(shù)資料
| 型號： | HGTP2N120CND |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBTs(13A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 92K |
| 代理商： | HGTP2N120CND |
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
5.0
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
400
350
300
250
200
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
150
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
R
G
= 51
, L = 5mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
500
300
700
400
600
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
200
100
I
C
,
0
5
10
15
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
20
25
30
14
15
35
250
μ
s PULSE TEST
DUTY CYCLE <0.5%, V
CE
= 20V
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
40
V
G
,
Q
G
, GATE CHARGE (nC)
14
16
30
25
20
10
12
15
10
5
0
I
G (REF)
= 1mA, R
L
= 260
, T
C
= 25
o
C
V
CE
= 400V
V
CE
= 800V
V
CE
= 1200V
8
6
4
2
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
30
50
C
70
90
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
80
60
40
20
10
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
V
GE
= 10V
V
GE
= 15V
DUTY CYCLE <0.5%, T
C
= 110
o
C
250
μ
s PULSE TEST
HGTP2N120CND, HGT1S2N120CNDS
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HGTP2N120CNS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGTP3N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP3N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4D9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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