參數(shù)資料
型號(hào)： HGTP2N120CND
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 13A, 1200V, NPT Series N-Channel IGBTs(13A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管)
中文描述： 13 A, 1200 V, N-CHANNEL IGBT, TO-220AB
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 92K
代理商： HGTP2N120CND
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP2N120CND,
HGT1S2N120CNDS
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
13
7
20
±
20
±
30
A
A
A
V
V
13A at 1200V
104
0.83
-55 to 150
W
W/
o
C
o
C
300
260
8
o
C
o
C
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 51
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
CES
I
C
= 250
μ
A, V
GE
= 0V
V
CE
= BV
CES
1200
-
-
V
Collector to Emitter Leakage Current
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
100
μ
A
μ
A
-
100
-
-
-
1.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 2.6A,
V
GE
= 15V
-
2.05
2.40
V
-
2.75
3.50
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
= 45
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 51
,
V
GE
= 15V,
L = 5mH, V
CE(PK)
= 1200V
I
C
= 2.6A, V
CE
= 0.5 BV
CES
I
C
= 2.6A,
V
CE
= 0.5 BV
CES
6.4
6.7
-
V
Gate to Emitter Leakage Current
-
-
±
250
nA
Switching SOA
13
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
Q
G(ON)
-
10.2
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
30
36
nC
-
36
43
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 2.6A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 51
,
L = 5mH
Test Circuit (Figure 20)
-
25
30
ns
Current Rise Time
-
11
15
ns
Current Turn-Off Delay Time
-
205
220
ns
Current Fall Time
-
260
320
ns
Turn-On Energy
-
425
590
μ
J
μ
J
Turn-Off Energy (Note 3)
-
355
390
Current Turn-On Delay Time
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 2.6A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 51
,
L = 5mH
Test Circuit (Figure 20)
-
21
25
ns
Current Rise Time
-
11
15
ns
Current Turn-Off Delay Time
-
225
240
ns
Current Fall Time
-
360
420
ns
Turn-On Energy
-
800
1100
μ
J
μ
J
Turn-Off Energy (Note 3)
-
530
580
HGTP2N120CND, HGT1S2N120CNDS
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