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參數(shù)資料
| 型號(hào)： | HGTP20N60B3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 140K |
| 代理商： | HGTP20N60B3 |
2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
80
60
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
120
100
110
90
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 3
, L = 500
μ
H, V
CE
= 390V
15
10
20
25
30
35
40
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
16
32
24
48
64
40
56
R
G
= 3
, L = 500
μ
H, V
CE
= 390V
72
80
15
10
20
25
30
35
40
5
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
I
C
,
0
80
120
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
160
200
240
6
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
40
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
I
G(REF)
= 1mA, R
L
= 15
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
8
12
16
V
CE
= 600V
20
40
60
80
120
100
140
160
0
I
CE
= 10A
0
0.2
0.4
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
0.6
1.0
125
25
150
1.8
0.8
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 3
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
1.4
1.2
1.6
I
CE
= 30A
I
CE
= 20A
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
3
1000
E
T
,
10
T
J
= 125
o
C, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 10A
I
CE
= 20A
I
CE
= 30A
HGTG20N60A4, HGTP20N60A4
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