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參數(shù)資料
| 型號： | HGTP1N120CN |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 6.2 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 77K |
| 代理商： | HGTP1N120CN |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
1
0.5
8
12
20
2
3
16
24
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
4
8
24
20
12
16
28
1
0.5
2
3
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
1
3
60
2
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
80
64
72
0.5
1.5
2.5
68
76
84
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
0.5
1
3
240
320
400
2
280
440
520
480
360
1.5
2.5
560
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V OR 15V
I
C
,
0
2
4
6
6
9
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
10
12
15
14
16
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250
μ
s
T
C
= 25
o
C
T
C
= -55
o
C
T
C
= 150
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
15
3
6
0
0
20
8
4
12
9
12
16
I
G(REF)
= 1mA, R
L
= 600
, T
C
= 25
o
C
V
CE
= 1200V
V
CE
= 800V
V
CE
= 400V
HGTD1N120CNS, HGTP1N120CN
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| HGTP1N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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| HGTP20N35G3VL | 功能描述:IGBT 晶體管 Coil Dri 20A 350V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP20N36G3VL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
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