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參數(shù)資料
| 型號(hào)： | HGTP1N120CN |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 6.2 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | HGTP1N120CN |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
0.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
10
2.0
1.0
100
3.0
200
300
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 2.1
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
= 75
o
C, V
GE
= 15V
IDEAL DIODE
V
CE
= 960V
T
J
= 150
o
C, R
G
= 82
, L = 4mH
T
C
V
GE
15V
110
o
C 13V
15V
75
o
110
o
C
75
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
13
14
15
10
12
14
16
18
20
10
12
14
16
18
20
V
CE
= 840V, R
G
= 82
, T
J
= 125
o
C
t
SC
I
SC
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
6
6
8
1
3
5
7
1
3
5
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 13V
PULSE DURATION = 250
μ
s
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
2
4
6
8
4
0
5
6
3
2
1
1
3
5
7
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
E
O
,
μ
J
1000
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
800
400
200
2
1
3
1200
0
0.5
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
1
2
3
0.5
100
300
200
400
500
1.5
2.5
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V OR 15V
HGTD1N120CNS, HGTP1N120CN
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