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參數(shù)資料
| 型號： | HGTP1N120CN |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 6.2 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 77K |
| 代理商： | HGTP1N120CN |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 1.0A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
-
15
21
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
65
95
ns
Current Fall Time
t
fI
-
365
450
ns
Turn-On Energy (Note 5)
E
ON1
-
78
-
μ
J
Turn-On Energy (Note 5)
E
ON2
-
175
195
μ
J
Turn-Off Energy (Note 4)
E
OFF
-
140
155
μ
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 1.0 A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
-
13
20
ns
Current Rise Time
t
rI
-
11
18
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
75
100
ns
Current Fall Time
t
fI
-
465
625
ns
Turn-On Energy (Note 5)
E
ON1
-
83
-
μ
J
Turn-On Energy (Note 5)
E
ON2
-
385
460
μ
J
Turn-Off Energy (Note 4)
E
OFF
-
200
225
μ
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
2.1
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
4
5
1
25
75
100
125
150
3
2
6
7
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
I
C
,
1
2
600
800
400
200
1000
1200
0
4
6
5
7
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V, L = 2mH
HGTD1N120CNS, HGTP1N120CN
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