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參數(shù)資料
| 型號： | HGTP14N41G3VLS |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 中文描述： | 第14A，410V N溝道，邏輯電平，電壓鉗位的IGBT |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 194K |
| 代理商： | HGTP14N41G3VLS |
2001 Fairchild Semiconductor Corporation
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 10. TRANSFER CHARACTERISTIC
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
0
2
3
30
5
4
40
I
C
,
0
20
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= 175
o
C
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 5.0V
V
GE
= 3.7V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
1
2
5
0
30
3
4
10
40
20
0
V
GE
= 5.0V
V
GE
= 3.7V
V
GE
= 4.0V
V
GE
= 4.5V
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= 150
o
C
0
2
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
4
5
50
30
1
40
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= 25
o
C
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 3.7V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
20
40
50
0
2
3
4
1
10
30
5
60
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= -40
o
C
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 3.7V
V
GE
= 4.0V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
40
30
20
50
60
3
2
4
0
1
I
C
,
5
V
GE
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
T
J
= 25
o
C
0
32
40
2
1
3
4
5
16
8
24
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
C
,
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 5V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -40
o
C
HGT1S14N41G3VLS, HGTP14N41G3VL
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