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參數(shù)資料
| 型號： | HGTP14N41G3VLS |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 中文描述： | 第14A，410V N溝道，邏輯電平，電壓鉗位的IGBT |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 194K |
| 代理商： | HGTP14N41G3VLS |
2001 Fairchild Semiconductor Corporation
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S14N41G3VLS,
HGTP14N41G3VL
430
445
24
25
18
±
10
15
11.5
340
136
0.91
-55 to 175
-55 to 175
5
2
UNITS
V
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
kV
kV
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous at V
GE
= 5V, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Inductive Switching Current at L = 3 mH, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
at L = 3 mH, T
C
= 150
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
Collector to Emitter Avalanche Energy at L = 3 mH, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
Electrostatic Discharge Voltage HBM at 250pF, 1500
All Pin Configurations . . . . . . . . .ESD
Electrostatic Discharge Voltage MM at 200pF, 0
All Pin Configurations . . . . . . . . . . . . .ESD
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
at V
GE
= 5V, T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. May be exceeded if I
GEM
is limited to 10mA.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CER
I
C
= 10mA, R
G
= 1k
,
V
GE
= 0V,
T
J
= -40
o
C to 150
o
C (Figure 17)
I
C
= 10mA, V
GE
= 0V, T
J
= -40
o
C to 150
o
C
I
C
= 10A, V
CE
= 12V
I
C
= 10A, V
CE
= 12V, V
GE
= 5V (Figure 16)
I
C
= 15A, R
G
= 1k
I
C
= 10mA
V
CE
= 350V,
V
GE
= 0V (Figure 13)
380
410
430
V
Collector to Emitter Breakdown Voltage
BV
CES
V
GEP
Q
G(ON)
BV
CE(CL)
BV
ECS
I
CES
395
425
445
V
Gate to Emitter Plateau Voltage
-
3
-
V
Gate Charge
-
26
-
nC
Collector to Emitter Clamp Breakdown Voltage
380
410
430
V
Emitter to Collector Breakdown Voltage
24
28
-
V
Collector to Emitter Leakage Current
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
-
40
μ
A
μ
A
μ
A
μ
A
-
-
200
V
CE
= 15V, V
GE
= 0V
-
-
10
-
-
50
Emitter to Collector Leakage Current
I
ECS
V
EC
= 24V, V
GE
= 0V
(Figure 13)
-
-
1
mA
-
-
40
mA
Gate to Emitter Threshold Voltage
V
GE(TH)
V
CE(ON)
I
C
= 1mA, V
CE
= V
GE
(Figure 12)
I
C
= 10A, V
GE
= 3.7V
(Figures 3 to 9)
1.3
1.8
2.2
V
Collector to Emitter On-State Voltage
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -40
o
C
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 175
o
C
-
1.6
2.65
V
-
1.7
2.75
V
Collector to Emitter On-State Voltage
V
CE(ON)
I
C
= 6A, V
GE
= 4.0V
(Figures 3 to 9)
-
1.3
1.7
V
-
1.25
1.6
V
I
C
= 10A, V
GE
= 4.5V
(Figures 3 to 9)
-
1.45
1.7
V
-
1.55
1.8
V
I
C
= 14A, V
GE
= 5V
(Figures 3 to 9)
-
1.65
2.0
V
-
1.8
2.3
V
Gate Series Resistance
R
1
R
2
-
80
-
k
Gate to Emitter Resistance
10
18
26
HGT1S14N41G3VLS, HGTP14N41G3VL
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