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參數(shù)資料
| 型號： | HGTP14N40F3VL |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT |
| 中文描述： | 19 A, 420 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 147K |
| 代理商： | HGTP14N40F3VL |
2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
H
Typical Performance Curves
(Continued)
Figure 7. Collector to Emitter Current vs Collector
to Emitter On-State Voltage
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
30
0
10
0
2.0
1.0
3.0
4.0
40
20
T
J
= 175
°
C
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
2.0
1.0
3.0
4.0
30
15
5
0
25
10
PULSE DURATION = 250μs
DUTY CYCLE < 0.5%, V
CE
= 5V
T
J
= 25
°
C
T
J
= 175
°
C
2.5
1.5
3.5
4.5
T
J
= -40
°
C
20
I
C
,
T
C
CASE TEMPERATURE (
°
C)
40
25
175
125
75
50
100
150
30
20
10
0
V
GE
= 4.5V
2.2
175
50
100
2.0
1.8
1.6
1.4
1.0
V
CE
= V
GE
I
CE
= 1mA
V
T
,
T
J
JUNCTION TEMPERATURE (
°
C)
150
0
-50
125
75
25
-25
1.2
I
C
,
T
J
, JUNCTION TEMPERATURE (
°
C)
1000
10
0.1
10000
100
1.0
25
-25
175
125
75
-50
0
50
100
150
V
CES
= 250V
V
ECS
= 24V
V
CES
= 350V
25
175
125
75
50
100
150
T
J
, JUNCTION TEMPERATURE (
°
C)
t
o
S
14
12
8
6
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1K
Inductive t
OFF
10
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP14N41G3VL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| HGTP14N41G3VLS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP14N44G3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP15N120C3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, UFS Series N-Channel IGBTs |
| HGTP15N40C1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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