參數(shù)資料
型號: HGTP14N40F3VL
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT
中文描述: 19 A, 420 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù): 3/7頁
文件大?。?/td> 147K
代理商: HGTP14N40F3VL
2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
H
Typical Performance Curves
(Continued)
Figure 1. Self Clamped Inductive Switching
Current vs Time
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 5. Collector to Emitter Current vs Collector
to Emitter On-State Voltage
Figure 6. Collector to Emitter Current vs
Collector to Emitter On-State Voltage
t
CLP
, TIME IN CLAMP (μS)
I
S
,
60
20
80
40
0
R
G
= 1k
, V
GE
= 5V, V
DD
= 14V
200
160
140
0
120
40
20
60
80
T
J
= 25
°
C
T
J
= 150
°
C
SCIS Curves valid for V
clamp
Voltages of <430V
100
180
60
20
80
40
0
I
S
,
0
10
2
4
6
8
T
J
= 25
°
C
T
J
= 150
°
C
L, INDUCTANCE (mHy)
R
G
= 1k
, V
GE
= 5V, V
DD
= 14V
SCIS Curves valid for V
clamp
Voltages of
<
430V
1.25
1.15
1.05
0.95
0.90
25
-25
175
125
75
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
°
C)
V
C
,
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
I
CE
= 6A
1.00
1.10
1.20
1.45
1.35
1.25
1.15
25
-25
175
125
75
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
°
C)
V
C
,
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
I
CE
= 10A
1.40
1.30
1.20
1.10
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
30
0
10
0
2.0
1.0
3.0
4.0
40
20
T
J
= - 40
°
C
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
30
0
10
0
2.0
1.0
3.0
4.0
40
20
T
J
= 25
°
C
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
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